Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

S. De Gendt, M. Caymax, J. Chen, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, W. VandervorstT. Witters, E. Young, C. Zhao, M. Heyns

Research output: Contribution to conferencePaperpeer-review

Abstract

In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.

Original languageEnglish
Pages267-275
Number of pages9
Publication statusPublished - 2003
EventPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
Duration: 2003 Oct 122003 Oct 16

Other

OtherPhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
CountryUnited States
CityOrlando, FL.
Period03/10/1203/10/16

ASJC Scopus subject areas

  • Engineering(all)

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