Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

S. De Gendt; M. Caymax; J. Chen; M. Claes; T. Conard; A. Delabie; W. Deweerd; V. Kaushik; A. Kerber; S. Kubicek; M. Niwa; L. Pantisano; R. Puurunen; L. Ragnarsson; T. Schram; Y. Shimamoto; W. Tsai; E. Rohr; S. Van Elshocht; W. Vandervorst; T. Witters; E. Young; C. Zhao; M. Heyns

Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

S. De Gendt, M. Caymax, J. Chen, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. Tsai, E. Rohr, S. Van Elshocht, W. VandervorstT. Witters, E. Young, C. Zhao, M. Heyns

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to conference › Paper › peer-review

Abstract

In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO₂-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.

Original language	English
Pages	267-275
Number of pages	9
Publication status	Published - 2003
Event	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States Duration: 2003 Oct 12 → 2003 Oct 16

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Other	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Country/Territory	United States
City	Orlando, FL.
Period	03/10/12 → 03/10/16

ASJC Scopus subject areas

Engineering(all)

Cite this

De Gendt, S., Caymax, M., Chen, J., Claes, M., Conard, T., Delabie, A., Deweerd, W., Kaushik, V., Kerber, A., Kubicek, S., Niwa, M., Pantisano, L., Puurunen, R., Ragnarsson, L., Schram, T., Shimamoto, Y., Tsai, W., Rohr, E., Van Elshocht, S., ... Heyns, M. (2003). Scaling of Hf-based gate dielectrics - Integration with polysilicon gates. 267-275. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Scaling of Hf-based gate dielectrics - Integration with polysilicon gates. / De Gendt, S.; Caymax, M.; Chen, J. et al.

2003. 267-275 Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Research output: Contribution to conference › Paper › peer-review

De Gendt, S, Caymax, M, Chen, J, Claes, M, Conard, T, Delabie, A, Deweerd, W, Kaushik, V, Kerber, A, Kubicek, S, Niwa, M, Pantisano, L, Puurunen, R, Ragnarsson, L, Schram, T, Shimamoto, Y, Tsai, W, Rohr, E, Van Elshocht, S, Vandervorst, W, Witters, T, Young, E, Zhao, C & Heyns, M 2003, 'Scaling of Hf-based gate dielectrics - Integration with polysilicon gates', Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States, 03/10/12 - 03/10/16 pp. 267-275.

De Gendt S, Caymax M, Chen J, Claes M, Conard T, Delabie A et al.. Scaling of Hf-based gate dielectrics - Integration with polysilicon gates. 2003. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

De Gendt, S. ; Caymax, M. ; Chen, J. et al. / Scaling of Hf-based gate dielectrics - Integration with polysilicon gates. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.9 p.

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abstract = "In the quest for CMOS scaling, alternative gate dielectrics exhibiting reduced leakage compared to the conventional SiO2-based materials are required. Although consensus seems to exist on the gate dielectric material (Hf-based dielectrics), the choice of gate electrode material is currently under debate. In this paper we will describe issues that exist with respect to integration of Hf-based gate dielectric materials and poly silicon gate electrodes, specifically focusing on yield and treshold voltage control.",

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AU - Caymax, M.

AU - Chen, J.

AU - Claes, M.

AU - Conard, T.

AU - Delabie, A.

AU - Deweerd, W.

AU - Kaushik, V.

AU - Kerber, A.

AU - Kubicek, S.

AU - Niwa, M.

AU - Pantisano, L.

AU - Puurunen, R.

AU - Ragnarsson, L.

AU - Schram, T.

AU - Shimamoto, Y.

AU - Tsai, W.

AU - Rohr, E.

AU - Van Elshocht, S.

AU - Vandervorst, W.

AU - Witters, T.

AU - Young, E.

AU - Zhao, C.

AU - Heyns, M.

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Scaling of Hf-based gate dielectrics - Integration with polysilicon gates

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