Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides

Ye Zhang, Huaihong Guo, Wei Sun, Hongzhi Sun, Sajjad Ali, Zhidong Zhang, Riichiro Saito, Teng Yang

Research output: Contribution to journalArticlepeer-review

Abstract

Based on ab initio density functional calculation and nonresonant Raman theory, we calculate strain dependent Raman spectra of six kinds of transition-metal dichalcogenides (TMDCs). The biaxial strain dependence of Raman intensity and direct band gap in TMDC monolayers is systematically studied from which we show a scaling law of the Raman intensity and band gap. Out-of-plane A1g mode has vanishing intensity under a certain strain. Such a strain-induced behavior is found to be universal in the TMDC, and Raman intensity for the six TMDCs can be scaled as a function of Gruneissen parameter γ and Raman wavenumbers in the frame of Morse-type function. The scaling behavior of Raman intensity and direct band gap in TMDCs indicates of some material-independent picture which can be used for new understanding of properties and design of new-type functional devices for electronic and optoelectronic application based on strain engineering.

Original languageEnglish
Pages (from-to)1353-1361
Number of pages9
JournalJournal of Raman Spectroscopy
Volume51
Issue number8
DOIs
Publication statusPublished - 2020 Aug 1

Keywords

  • intensity dip
  • Raman intensity
  • scaling
  • strain effect
  • TMDC

ASJC Scopus subject areas

  • Materials Science(all)
  • Spectroscopy

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