The transition between fractional quantum Hall (FQH) plateaus, ν = 2/3↔3/5, is studied in Al0.3Ga0.7As/GaAs two-dimensional electron-gas systems. The transition width is independent of the sample-size at elevated temperatures T > 80 mK, and decreases with decreasing T. With decreasing T below 80 mK, the transition width splits into sample-specific values. The sample-size dependence indicates that the inelastic-scattering length (Lin) in FQH regime increases to become comparable to the size of conductor (of the order of 10 μm). We derive the absolute size of Lin as a function of T in FQH regime. We find surprising similarity of the scaling behavior in FQH transition to that in the earlier studied integer quantum Hall transitions.
- Fractional quantum Hall effect
- Inelastic-scattering length
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering