Scaling in fractional quantum Hall transitions

T. Machida, S. Ishizuka, S. Komiyama, K. Muraki, Y. Hirayama

Research output: Contribution to journalArticle

Abstract

The transition between fractional quantum Hall (FQH) plateaus, ν = 2/3↔3/5, is studied in Al0.3Ga0.7As/GaAs two-dimensional electron-gas systems. The transition width is independent of the sample-size at elevated temperatures T > 80 mK, and decreases with decreasing T. With decreasing T below 80 mK, the transition width splits into sample-specific values. The sample-size dependence indicates that the inelastic-scattering length (Lin) in FQH regime increases to become comparable to the size of conductor (of the order of 10 μm). We derive the absolute size of Lin as a function of T in FQH regime. We find surprising similarity of the scaling behavior in FQH transition to that in the earlier studied integer quantum Hall transitions.

Original languageEnglish
Pages (from-to)182-186
Number of pages5
JournalPhysica B: Condensed Matter
Volume298
Issue number1-4
DOIs
Publication statusPublished - 2001 Apr 1
Externally publishedYes

Keywords

  • Fractional quantum Hall effect
  • Inelastic-scattering length
  • Scaling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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