Scaling effect on the operation stability of short-channel organic single-crystal transistors

T. Minari, T. Miyadera, K. Tsukagoshi, T. Hamano, Y. Aoyagi, R. Yasuda, K. Nomoto, T. Nemoto, S. Isoda

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Organic single-crystal transistors allowed the authors to investigate the essential features of short-channel devices. Rubrene single-crystal transistors with channel lengths of 500 and 100 nm exhibited good field-effect characteristics under extremely low operation voltages, although space charge limited current degrades the subthreshold properties of 100 nm devices. Furthermore, bias-stress measurements revealed the remarkable stability of organic single-crystal transistors regardless of device size. The bias-stress effect was explained by the trapping of gate-induced charges into localized density of states in the single-crystal channel.

Original languageEnglish
Article number063506
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Scaling effect on the operation stability of short-channel organic single-crystal transistors'. Together they form a unique fingerprint.

Cite this