Abstract
Organic single-crystal transistors allowed the authors to investigate the essential features of short-channel devices. Rubrene single-crystal transistors with channel lengths of 500 and 100 nm exhibited good field-effect characteristics under extremely low operation voltages, although space charge limited current degrades the subthreshold properties of 100 nm devices. Furthermore, bias-stress measurements revealed the remarkable stability of organic single-crystal transistors regardless of device size. The bias-stress effect was explained by the trapping of gate-induced charges into localized density of states in the single-crystal channel.
Original language | English |
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Article number | 063506 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)