SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures

Naoteru Shigekawa; Kazumi Nishimura; Tetsuya Suemitsu; Haruki Yokoyama; Kohji Hohkawa

doi:10.1109/LED.2006.889043

SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of > 40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts.

Original language	English
Pages (from-to)	90-92
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/LED.2006.889043
Publication status	Published - 2007 Feb
Externally published	Yes

Keywords

AlGaN/GaN
Heterostructure
Interdigital transducer (IDTs)
Surface acoustic wave (SAW) Filter

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.889043

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title = "SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures",

abstract = "We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of > 40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts.",

keywords = "AlGaN/GaN, Heterostructure, Interdigital transducer (IDTs), Surface acoustic wave (SAW) Filter",

author = "Naoteru Shigekawa and Kazumi Nishimura and Tetsuya Suemitsu and Haruki Yokoyama and Kohji Hohkawa",

year = "2007",

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language = "English",

volume = "28",

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T1 - SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures

AU - Shigekawa, Naoteru

AU - Nishimura, Kazumi

AU - Suemitsu, Tetsuya

AU - Yokoyama, Haruki

AU - Hohkawa, Kohji

PY - 2007/2

Y1 - 2007/2

N2 - We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of > 40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts.

AB - We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of > 40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts.

KW - AlGaN/GaN

KW - Heterostructure

KW - Interdigital transducer (IDTs)

KW - Surface acoustic wave (SAW) Filter

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SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures

Abstract

Keywords

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