SAW filters Composed of interdigital schottky and ohmic contacts on AlGaN/GaN heterostructures

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of > 40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts.

Original languageEnglish
Pages (from-to)90-92
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1
Externally publishedYes

Keywords

  • AlGaN/GaN
  • Heterostructure
  • Interdigital transducer (IDTs)
  • Surface acoustic wave (SAW) Filter

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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