Abstract
We evaluated saturation energies and absorption recovery time dependent on reverse-bias voltage for a waveguide-coupled GaInN multiquantum well saturable absorber in a bisectional laser structure. When the applied reverse-bias was increased from 5 to 20 V, the saturation energy at 405 nm monotonically increased from 5 to 14 pJ; the linear absorption coefficient at 405 nm showed the same dependence. These dependences are different from those observed in an AlGaAs multiquantum well. The absorption recovery time was shortened to 3 ps when a highly reverse-bias voltage of 20 V was applied.
Original language | English |
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Article number | 171904 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2011 Apr 25 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)