Saturable absorbing dynamics of GaInN multiquantum well structures

Takao Miyajima, Shunsuke Kono, Hideki Watanabe, Tomoyuki Oki, Rintaro Koda, Masaru Kuramoto, Masao Ikeda, Hiroyuki Yokoyama

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We evaluated saturation energies and absorption recovery time dependent on reverse-bias voltage for a waveguide-coupled GaInN multiquantum well saturable absorber in a bisectional laser structure. When the applied reverse-bias was increased from 5 to 20 V, the saturation energy at 405 nm monotonically increased from 5 to 14 pJ; the linear absorption coefficient at 405 nm showed the same dependence. These dependences are different from those observed in an AlGaAs multiquantum well. The absorption recovery time was shortened to 3 ps when a highly reverse-bias voltage of 20 V was applied.

Original languageEnglish
Article number171904
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2011 Apr 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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