S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

Young Zo Yoo, Zheng Wu Jin, T. Chikyow, T. Fukumura, M. Kawasaki, H. Koinuma

Research output: Contribution to journalArticle

147 Citations (Scopus)

Abstract

Sulphur doping in zincoxide film was done by supplying zincsulphide species with pulsed-laser-deposition method. It was found that variations of lattice constants and band gaps with respect to sulphur content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation and resistivity than those of ZnO owing to higher carrier concentration.

Original languageEnglish
Pages (from-to)3798-3800
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number20
DOIs
Publication statusPublished - 2002 Nov 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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