Sulphur doping in zincoxide film was done by supplying zincsulphide species with pulsed-laser-deposition method. It was found that variations of lattice constants and band gaps with respect to sulphur content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation and resistivity than those of ZnO owing to higher carrier concentration.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)