Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2

H. Kimura, T. Fukumura, M. Kawasaki, K. Inaba, T. Hasegawa, H. Koinuma

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Abstract

Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10 20cm-3 is achieved by Sb doping. A Sn 0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K.

Original languageEnglish
Pages (from-to)94-96
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number1
DOIs
Publication statusPublished - 2002 Jan 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kimura, H., Fukumura, T., Kawasaki, M., Inaba, K., Hasegawa, T., & Koinuma, H. (2002). Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO2. Applied Physics Letters, 80(1), 94-96. https://doi.org/10.1063/1.1430856