Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure

Takeharu Koga, Kazuaki Yamazaki, Hiroki Wakimoto, Yoshikazu Takahashi, Humiaki Kirihata, Yasukazu Seki

Research output: Contribution to conferencePaper

10 Citations (Scopus)

Abstract

A 2.5 kV-1.8 kA advanced type Power Pack IGBT has been developed by use of our original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of Ic = 6600 A, Vc(peak) = 2400 V, Tj = 125 °C and the wide SCSOA of Vcc = 1800 V, Ic = 10000 A, Tj = 125 °C, tw = 15 μs are realized. These high electrical ruggedness come from decreasing the imbalance operation among chips.

Original languageEnglish
Pages437-440
Number of pages4
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn
Duration: 1998 Jun 31998 Jun 6

Other

OtherProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
CityKyoto, Jpn
Period98/6/398/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Koga, T., Yamazaki, K., Wakimoto, H., Takahashi, Y., Kirihata, H., & Seki, Y. (1998). Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure. 437-440. Paper presented at Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98, Kyoto, Jpn, .