Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

Original languageEnglish
Title of host publicationOrganic Electronics
Subtitle of host publicationMaterials, Devices and Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781604234176
Publication statusPublished - 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 29

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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