Roughness reduction in polycrystalline silicon thin films formed by continuous-wave laser lateral crystallization with Cap SiO2 thin films

Shuntaro Fujii, Shin Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In continuous-wave (cw) laser lateral crystallization of amorphous silicon (a-Si) thin films, the effects of cap SiO2 thin films were investigated. The thickness of the cap SiO2 film was 10 nm, which is sufficiently thin to exclude anti reflection effect. The cap SiO2 thin films suppressed the generation of voids during the cw laser crystallization, and the available crystallization condition to form lateral-crystallized polycrystalline silicon (poly-Si) thin films was expanded. By using the cap SiO2 thin films, the surface of the lateral-crystallized poly-Si thin films became smooth, and an average roughness of 1.3nm was achieved.

Original languageEnglish
Article number04C129
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Roughness reduction in polycrystalline silicon thin films formed by continuous-wave laser lateral crystallization with Cap SiO<sub>2</sub> thin films'. Together they form a unique fingerprint.

  • Cite this