Abstract
A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250 deg./sec. and measured sensitivity was 2. 1 fF/(deg./sec.).
| Original language | English |
|---|---|
| Pages (from-to) | 437-443 |
| Number of pages | 7 |
| Journal | IEEJ Transactions on Sensors and Micromachines |
| Volume | 118 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
Keywords
- RIE
- XeF
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering
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Choi, J. J., Minami, K., & Esashi, M. (1998). Rotating vibration type silicon angular rate sensor by deep ICPRIE and Xef2 gas etching. IEEJ Transactions on Sensors and Micromachines, 118(10), 437-443. https://doi.org/10.1541/ieejsmas.118.437