Rotating vibration type silicon angular rate sensor by deep ICPRIE and Xef2 gas etching

Jae joon Choi, Kazuyuki Minami, Masayoshi Esashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A rotating vibration type silicon angular rate sensor was fabricated by deep ICPRIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. This sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. The angular rate was measured in a range between -250 to +250 deg./sec. and measured sensitivity was 2. 1 fF/(deg./sec.).

Original languageEnglish
Pages (from-to)437-443
Number of pages7
JournalIEEJ Transactions on Sensors and Micromachines
Volume118
Issue number10
DOIs
Publication statusPublished - 1998 Jan 1

Keywords

  • RIE
  • XeF

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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