TY - GEN
T1 - Rotated epitaxy of 3C-SiC(111) on Si(110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy
AU - Sambonsuge, Shota
AU - Saitoh, Eiji
AU - Jung, Myung Ho
AU - Fukidome, Hirokazu
AU - Filimonov, Sergey
AU - Suemitsu, Maki
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - 3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20%) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.
AB - 3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20%) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.
KW - Epitaxy
KW - Graphene
KW - Monomethylsilane
KW - Silicon
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=84874054712&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874054712&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.740-742.339
DO - 10.4028/www.scientific.net/MSF.740-742.339
M3 - Conference contribution
AN - SCOPUS:84874054712
SN - 9783037856246
T3 - Materials Science Forum
SP - 339
EP - 343
BT - Silicon Carbide and Related Materials 2012, ECSCRM 2012
A2 - Lebedev, Alexander A.
A2 - Davydov, Sergey Yu.
A2 - Ivanov, Pavel A.
A2 - Levinshtein, Mikhail E.
PB - Trans Tech Publications Ltd
T2 - 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
Y2 - 2 September 2012 through 6 September 2012
ER -