Rotated epitaxy of 3C-SiC(111) on Si(110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy

Shota Sambonsuge, Eiji Saitoh, Myung Ho Jung, Hirokazu Fukidome, Sergey Filimonov, Maki Suemitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

3C-SiC is the only polytype that grows heteroepitaxially on Si substrates and, therefore, it is of high interest for various potentail applications. However, the large (~20%) lattice mismatch of SiC with the Si substrate causes a serious problem. In this respect, rotated epitaxy of 3C-SiC(111) on the Si(110) substrate is highly promising because it allows reduction of the lattice mismatch down to a few percent. We have systematically searched the growth conditions for the onset of this rotated epitaxy, and have found that the rotaed epitaxy occurrs at higher growth temperatures and at lower source-gas pressures. This result indicates that the rotated epitaxy occurs under growth conditions that are close to the equilibrium and is thefore thermodynamically, rather than kinetically, driven.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
EditorsAlexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov, Mikhail E. Levinshtein
PublisherTrans Tech Publications Ltd
Pages339-343
Number of pages5
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: 2012 Sep 22012 Sep 6

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period12/9/212/9/6

Keywords

  • Epitaxy
  • Graphene
  • Monomethylsilane
  • Silicon
  • XRD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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