TY - GEN
T1 - Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers
AU - Higurashi, Eiji
AU - Azuma, Hayato
AU - Yamamoto, Michitaka
AU - Matsumae, Takeshi
AU - Kurashima, Yuichi
AU - Takagi, Hideki
AU - Suga, Tadatomo
N1 - Publisher Copyright:
© 2019 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2019/5
Y1 - 2019/5
N2 - Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. Bonding was performed immediately after removing the Au passivation layers and deposition of Si nanolayers by Ar fast atom beam irradiation. Amorphous Ti/Si layers formed at the bonding interfaces, and strong void-free bonding was achieved.
AB - Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. Bonding was performed immediately after removing the Au passivation layers and deposition of Si nanolayers by Ar fast atom beam irradiation. Amorphous Ti/Si layers formed at the bonding interfaces, and strong void-free bonding was achieved.
UR - http://www.scopus.com/inward/record.url?scp=85068418496&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068418496&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735346
DO - 10.23919/LTB-3D.2019.8735346
M3 - Conference contribution
AN - SCOPUS:85068418496
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
SP - 84
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -