Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect

H. Akinaga, M. Mizuguchi, K. Ono, M. Oshima

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

A huge positive magnetoresistance effect has been discovered in MnSb granular films. Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs (001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, more than 1000% change in the current, which we term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively low magnetic field (less than 0.5 T) at room temperature.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number3
DOIs
Publication statusPublished - 2000 Jan 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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