TY - JOUR
T1 - Room-temperature thousandfold magnetoresistance change in MnSb granular films
T2 - Magnetoresistive switch effect
AU - Akinaga, H.
AU - Mizuguchi, M.
AU - Ono, K.
AU - Oshima, M.
PY - 2000/1/17
Y1 - 2000/1/17
N2 - A huge positive magnetoresistance effect has been discovered in MnSb granular films. Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs (001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, more than 1000% change in the current, which we term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively low magnetic field (less than 0.5 T) at room temperature.
AB - A huge positive magnetoresistance effect has been discovered in MnSb granular films. Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs (001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, more than 1000% change in the current, which we term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively low magnetic field (less than 0.5 T) at room temperature.
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U2 - 10.1063/1.125753
DO - 10.1063/1.125753
M3 - Article
AN - SCOPUS:0000802735
VL - 76
SP - 357
EP - 359
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -