Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer

A. El Fatimy; E. Abraham; E. Nguema; P. Mounaix; F. Teppe; W. Knap; T. Otsuji

doi:10.1109/ICIMW.2008.4665764

Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer

A. El Fatimy, E. Abraham, E. Nguema, P. Mounaix, F. Teppe, W. Knap, T. Otsuji

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.

Original language	English
Title of host publication	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
DOIs	https://doi.org/10.1109/ICIMW.2008.4665764
Publication status	Published - 2008 Dec 31
Event	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 - Pasadena, CA, United States Duration: 2008 Sep 15 → 2008 Sep 19

Publication series

Name	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008

Other

Other	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
Country/Territory	United States
City	Pasadena, CA
Period	08/9/15 → 08/9/19

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICIMW.2008.4665764

Cite this

El Fatimy, A., Abraham, E., Nguema, E., Mounaix, P., Teppe, F., Knap, W., & Otsuji, T. (2008). Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 [4665764] (33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008). https://doi.org/10.1109/ICIMW.2008.4665764

Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer. / El Fatimy, A.; Abraham, E.; Nguema, E.; Mounaix, P.; Teppe, F.; Knap, W.; Otsuji, T.

33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008. 4665764 (33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

El Fatimy, A, Abraham, E, Nguema, E, Mounaix, P, Teppe, F, Knap, W & Otsuji, T 2008, Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer. in 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008., 4665764, 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008, 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008, Pasadena, CA, United States, 08/9/15. https://doi.org/10.1109/ICIMW.2008.4665764

El Fatimy A, Abraham E, Nguema E, Mounaix P, Teppe F, Knap W et al. Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008. 4665764. (33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008). https://doi.org/10.1109/ICIMW.2008.4665764

El Fatimy, A. ; Abraham, E. ; Nguema, E. ; Mounaix, P. ; Teppe, F. ; Knap, W. ; Otsuji, T. / Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer. 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. 2008. (33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008).

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title = "Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer",

abstract = "We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.",

author = "{El Fatimy}, A. and E. Abraham and E. Nguema and P. Mounaix and F. Teppe and W. Knap and T. Otsuji",

year = "2008",

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AU - El Fatimy, A.

AU - Abraham, E.

AU - Nguema, E.

AU - Mounaix, P.

AU - Teppe, F.

AU - Knap, W.

AU - Otsuji, T.

PY - 2008/12/31

Y1 - 2008/12/31

N2 - We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.

AB - We demonstrated a room-temperature detection of terahertz radiation with a plasma wave nanometric transistor. The detection is resonant and can be efficient for terahertz time-resolved imaging.

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T3 - 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008

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Y2 - 15 September 2008 through 19 September 2008

ER -

Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer

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