Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals

Taiichi Otsuji; Yahya M. Meziani; Mitsuhiro Hanabe; Takuya Nishimura; Eiichi Sano

doi:10.1117/12.732832

Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals

Taiichi Otsuji, Yahya M. Meziani, Mitsuhiro Hanabe, Takuya Nishimura, Eiichi Sano

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have designed and fabricated our original terahertz plasmon-resonant emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. The fabricated device is subjected to 1550-nm, 1-mW (a) a single CW-laser, (b) 4-THz photomixed dual CW-laser, and (c) a 70-fs pulsed-laser illumination at room temperature. In case of (a), terahertz emission due to the plasmon modes of self oscillation is detected by a Si bolometer under certain bias conditions. In case of (b), a resonant peak of injection-locked 4-THz oscillation is clearly observed on the device photoresponse. In case of (c), an impulsive radiation followed by relaxation oscillation is observed by electrooptic sampling, whose Fourier spectrum exhibited resonant peaks of plasmons' harmonic modes up to 4 THz. Estimated radiation power exceeds 0.1 μW, resulting in excellent conversion efficiency of the order of 10^-4.

Original language	English
Title of host publication	Terahertz Physics, Devices, and Systems II
DOIs	https://doi.org/10.1117/12.732832
Publication status	Published - 2007 Dec 1
Event	Terahertz Physics, Devices, and Systems II - Boston, MA, United States Duration: 2007 Sep 11 → 2007 Sep 12

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6772
ISSN (Print)	0277-786X

Other

Other	Terahertz Physics, Devices, and Systems II
Country	United States
City	Boston, MA
Period	07/9/11 → 07/9/12

Keywords

Emitter
Grating
HEMT
Photomixing
Plasmon
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.732832

Fingerprint Dive into the research topics of 'Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals'. Together they form a unique fingerprint.

Cite this

Otsuji, T., Meziani, Y. M., Hanabe, M., Nishimura, T., & Sano, E. (2007). Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals. In Terahertz Physics, Devices, and Systems II [67720M] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6772). https://doi.org/10.1117/12.732832

Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals. / Otsuji, Taiichi; Meziani, Yahya M.; Hanabe, Mitsuhiro; Nishimura, Takuya; Sano, Eiichi.

Terahertz Physics, Devices, and Systems II. 2007. 67720M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Otsuji, T, Meziani, YM, Hanabe, M, Nishimura, T & Sano, E 2007, Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals. in Terahertz Physics, Devices, and Systems II., 67720M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6772, Terahertz Physics, Devices, and Systems II, Boston, MA, United States, 07/9/11. https://doi.org/10.1117/12.732832

@inproceedings{8b92794b5b2f44f5a1d3e3df73b69480,

title = "Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals",

abstract = "We have designed and fabricated our original terahertz plasmon-resonant emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. The fabricated device is subjected to 1550-nm, 1-mW (a) a single CW-laser, (b) 4-THz photomixed dual CW-laser, and (c) a 70-fs pulsed-laser illumination at room temperature. In case of (a), terahertz emission due to the plasmon modes of self oscillation is detected by a Si bolometer under certain bias conditions. In case of (b), a resonant peak of injection-locked 4-THz oscillation is clearly observed on the device photoresponse. In case of (c), an impulsive radiation followed by relaxation oscillation is observed by electrooptic sampling, whose Fourier spectrum exhibited resonant peaks of plasmons' harmonic modes up to 4 THz. Estimated radiation power exceeds 0.1 μW, resulting in excellent conversion efficiency of the order of 10-4.",

keywords = "Emitter, Grating, HEMT, Photomixing, Plasmon, Terahertz",

author = "Taiichi Otsuji and Meziani, {Yahya M.} and Mitsuhiro Hanabe and Takuya Nishimura and Eiichi Sano",

year = "2007",

month = dec,

day = "1",

doi = "10.1117/12.732832",

language = "English",

isbn = "9780819469328",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Terahertz Physics, Devices, and Systems II",

note = "Terahertz Physics, Devices, and Systems II ; Conference date: 11-09-2007 Through 12-09-2007",

}

TY - GEN

T1 - Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals

AU - Otsuji, Taiichi

AU - Meziani, Yahya M.

AU - Hanabe, Mitsuhiro

AU - Nishimura, Takuya

AU - Sano, Eiichi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We have designed and fabricated our original terahertz plasmon-resonant emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. The fabricated device is subjected to 1550-nm, 1-mW (a) a single CW-laser, (b) 4-THz photomixed dual CW-laser, and (c) a 70-fs pulsed-laser illumination at room temperature. In case of (a), terahertz emission due to the plasmon modes of self oscillation is detected by a Si bolometer under certain bias conditions. In case of (b), a resonant peak of injection-locked 4-THz oscillation is clearly observed on the device photoresponse. In case of (c), an impulsive radiation followed by relaxation oscillation is observed by electrooptic sampling, whose Fourier spectrum exhibited resonant peaks of plasmons' harmonic modes up to 4 THz. Estimated radiation power exceeds 0.1 μW, resulting in excellent conversion efficiency of the order of 10-4.

AB - We have designed and fabricated our original terahertz plasmon-resonant emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. The fabricated device is subjected to 1550-nm, 1-mW (a) a single CW-laser, (b) 4-THz photomixed dual CW-laser, and (c) a 70-fs pulsed-laser illumination at room temperature. In case of (a), terahertz emission due to the plasmon modes of self oscillation is detected by a Si bolometer under certain bias conditions. In case of (b), a resonant peak of injection-locked 4-THz oscillation is clearly observed on the device photoresponse. In case of (c), an impulsive radiation followed by relaxation oscillation is observed by electrooptic sampling, whose Fourier spectrum exhibited resonant peaks of plasmons' harmonic modes up to 4 THz. Estimated radiation power exceeds 0.1 μW, resulting in excellent conversion efficiency of the order of 10-4.

KW - Emitter

KW - Grating

KW - HEMT

KW - Photomixing

KW - Plasmon

KW - Terahertz

UR - http://www.scopus.com/inward/record.url?scp=42449132270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42449132270&partnerID=8YFLogxK

U2 - 10.1117/12.732832

DO - 10.1117/12.732832

M3 - Conference contribution

AN - SCOPUS:42449132270

SN - 9780819469328

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Terahertz Physics, Devices, and Systems II

T2 - Terahertz Physics, Devices, and Systems II

Y2 - 11 September 2007 through 12 September 2007

ER -