Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP Material Systems

A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron- mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ∼125 V/W and ∼10-11 W/Hz0.5 for 0.30THz radiation.

Original languageEnglish
Title of host publicationIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs
Publication statusPublished - 2010 Nov 30
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy
Duration: 2010 Sep 52010 Sep 10

Publication series

NameIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Other

Other35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
CountryItaly
CityRome
Period10/9/510/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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