Abstract
The nitridation reaction is significantly important to utilize the unique properties of nitrides and nitrogen-doped materials. However, nitridation generally requires a high temperature or highly reactive reagents (often explosive) because the energies of N-N bond cleavage and nitrogen anion formation (N3-) are very high. We demonstrate the first room-temperature synthesis of GaN directly from GaCl3 by nanoscale atom exchange reaction. Nonequilibrium nitrogen molecules with very high translational energy were used as a chemically stable and safe nitrogen source. The irradiation of molecular nitrogen to the desired reaction area successfully provided a gallium nitride (GaN) nanosheet that exhibited a typical photoluminescence spectrum. Because this process retains the target substrate room temperature and does not involve any photon nor charged ion, it allows damage-less synthesis of the semiconducting metal nitrides, even directly on plastic substrates such as polyethylene terephthalate (PET).
Original language | English |
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Pages (from-to) | 41629-41633 |
Number of pages | 5 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 48 |
DOIs | |
Publication status | Published - 2017 Dec 6 |
Keywords
- gallium nitride
- nanosheet
- neutral beam process
- nitridation reaction
- solid-gas interface
ASJC Scopus subject areas
- Materials Science(all)