Room-temperature resonant tunneling diode with high-Ge-fraction strained Si1-xGex and nanometer-order ultrathin Si

Masao Sakuraba, Kuniaki Takahashi, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


For the purpose of heterointegration of Si-based group IV semiconductor quantum effect devices into Si large-scale integrated circuit, formation of atomically flat heterointerfaces in quantum heterostructure by lowering Si barrier growth temperature was investigated in order to improve negative differential conductance (NDC) characteristics of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode. It was found that roughness generation at heterointerfaces is drastically suppressed by utilizing, Si barriers with nanometer order thickness deposited using Si 2H6 reaction at a lower temperature of 400°C instead of SiH4 reaction at 500°C after the Si0.42Ge 0.58 growth. NDC characteristics show that difference between peak and valley currents is effectively enhanced at 11-295K by using Si 2H6 at 400°C, compared with that using SiH4 at 500°C. Thermionic-emission dominant characteristics at higher temperatures above 100 K indicates a possibility that introduction of larger barrier height (i.e., larger band discontinuity) enhances the NDC at room temperature by suppression of thermionic-emission current.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Number of pages9
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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