Abstract
Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (EA, EB and EC in eV) have been determined as a function of composition as EA = 2.654x + 1.674(1 - x) - 0.22x(1 - x), EB = 2.767x + 1.749(1 - x) - 0.17x(1 - x) and EC = 2.923x + 1.972(1 - x) - 0.32x(1 - x). The PR results are discussed in terms of PL spectra.
Original language | English |
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Pages (from-to) | 7160-7161 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 36 |
Issue number | 12 A |
DOIs | |
Publication status | Published - 1997 Dec |
Externally published | Yes |
Keywords
- Alloy semiconductor
- Chalcopyrite semiconductor
- Modulation spectroscopy
- Photoreflectance
- Single crystal of CuAlGaSe
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)