Room-temperature photoreflectance of CuAlxGa1-xSe2 alloys

Sho Shirakata; Shigefusa Chichibu; Shigehiro Isomura

doi:10.1143/jjap.36.7160

Room-temperature photoreflectance of CuAl_xGa_1-xSe₂ alloys

Sho Shirakata, Shigefusa Chichibu, Shigehiro Isomura

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAl_xGa_1-xSe₂ alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (E_A, E_B and E_C in eV) have been determined as a function of composition as E_A = 2.654x + 1.674(1 - x) - 0.22x(1 - x), E_B = 2.767x + 1.749(1 - x) - 0.17x(1 - x) and E_C = 2.923x + 1.972(1 - x) - 0.32x(1 - x). The PR results are discussed in terms of PL spectra.

Original language	English
Pages (from-to)	7160-7161
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.36.7160
Publication status	Published - 1997 Dec
Externally published	Yes

Keywords

Alloy semiconductor
Chalcopyrite semiconductor
Modulation spectroscopy
Photoreflectance
Single crystal of CuAlGaSe

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.7160

Cite this

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title = "Room-temperature photoreflectance of CuAlxGa1-xSe2 alloys",

abstract = "Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (EA, EB and EC in eV) have been determined as a function of composition as EA = 2.654x + 1.674(1 - x) - 0.22x(1 - x), EB = 2.767x + 1.749(1 - x) - 0.17x(1 - x) and EC = 2.923x + 1.972(1 - x) - 0.32x(1 - x). The PR results are discussed in terms of PL spectra.",

keywords = "Alloy semiconductor, Chalcopyrite semiconductor, Modulation spectroscopy, Photoreflectance, Single crystal of CuAlGaSe",

author = "Sho Shirakata and Shigefusa Chichibu and Shigehiro Isomura",

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language = "English",

volume = "36",

pages = "7160--7161",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

number = "12 A",

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T1 - Room-temperature photoreflectance of CuAlxGa1-xSe2 alloys

AU - Shirakata, Sho

AU - Chichibu, Shigefusa

AU - Isomura, Shigehiro

PY - 1997/12

Y1 - 1997/12

N2 - Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (EA, EB and EC in eV) have been determined as a function of composition as EA = 2.654x + 1.674(1 - x) - 0.22x(1 - x), EB = 2.767x + 1.749(1 - x) - 0.17x(1 - x) and EC = 2.923x + 1.972(1 - x) - 0.32x(1 - x). The PR results are discussed in terms of PL spectra.

AB - Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (EA, EB and EC in eV) have been determined as a function of composition as EA = 2.654x + 1.674(1 - x) - 0.22x(1 - x), EB = 2.767x + 1.749(1 - x) - 0.17x(1 - x) and EC = 2.923x + 1.972(1 - x) - 0.32x(1 - x). The PR results are discussed in terms of PL spectra.

KW - Alloy semiconductor

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KW - Modulation spectroscopy

KW - Photoreflectance

KW - Single crystal of CuAlGaSe

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