Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures

Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin Ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi, Akira Uedono

Research output: Contribution to journalReview articlepeer-review

6 Citations (Scopus)

Abstract

For accelerating the development of GaN power-switching devices, current knowledge on the origins and dynamic properties of the major intrinsic nonradiative recombination centers (NRCs) in Mg-doped GaN (GaN:Mg) are reviewed, as lightly to heavily doped p-type planar GaN segments are required but certain compensating defects including NRCs hinder their formation. The results of complementary time-resolved photoluminescence and positron annihilation spectroscopy measurements on the epitaxial and ion-implanted GaN:Mg formed on low dislocation density GaN substrates indicate the following: Major intrinsic NRCs are the clusters of Ga vacancies (VGas) and N vacancies (VNs), namely VGa(VN)2 in the epitaxial GaN:Mg and (VGa)3(VN)3 in the ion-implanted GaN:Mg after appropriate thermal annealings. The minimum electron capture-cross-sections of VGa(VN)2 and (VGa)3(VN)3 are commonly the middle of 10-13 cm2 at 300 K, which is approximately four times larger than the hole capture-cross-section of the major intrinsic NRCs in n-type GaN, namely VGaVN divacancies, being 7 × 10-14 cm2

Original languageEnglish
Article numberSC0802
JournalJapanese journal of applied physics
Volume58
Issue numberSC
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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