TY - JOUR
T1 - Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ) p-type GaN fabricated by sequential ion-implantation of Mg and H
AU - Shima, K.
AU - Iguchi, H.
AU - Narita, T.
AU - Kataoka, K.
AU - Kojima, Kazunobu
AU - Uedono, A.
AU - Chichibu, S. F.
N1 - Funding Information:
This work was supported in part by “the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP)” by NEDO, and “Program for research and development of next-generation semiconductor to realize energy-saving society”, “Program of Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials”, and JSPS KAKENHI (Grant Nos. JP16H06427 and JP17H04809) by MEXT, Japan.
Publisher Copyright:
© 2018 Author(s).
PY - 2018/11/5
Y1 - 2018/11/5
N2 - Photoluminescence (PL) spectra of (000 1 ) N-polar p-type GaN fabricated by using the sequential ion-implantation of Mg and H with subsequent high temperature annealing exhibited the near-band-edge (NBE) emission at 300 K. The longest PL lifetime (τ PL) for the NBE emission of the sample with Mg and H concentrations of 1 × 1019 and 2 × 1020 cm-3, respectively, annealed at 1230 °C was 18 ps at 300 K. This value is almost comparable to that of the (0001) Ga-polar p-type Mg-doped GaN (p-GaN:Mg) homoepitaxial film of the same Mg concentration. By correlating τ PL and the concentration of major vacancy-type defects quantified using positron annihilation spectroscopy, the electron capture-cross-section (σn) of the major nonradiative recombination centers (NRCs), namely, clusters of Ga vacancies (VGas) and N vacancies (VNs) such as (VGa)3(VN)3, is estimated at a few times 10-13 cm2. This σn value is also comparable to that of the major NRCs in p-GaN:Mg epilayers, namely, VGa(VN)2 or VGa(VN)3, although the clustering sizes of the defects are different. These σn values are commonly larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of the major NRCs, VGaVN divacancies, in n-type GaN.
AB - Photoluminescence (PL) spectra of (000 1 ) N-polar p-type GaN fabricated by using the sequential ion-implantation of Mg and H with subsequent high temperature annealing exhibited the near-band-edge (NBE) emission at 300 K. The longest PL lifetime (τ PL) for the NBE emission of the sample with Mg and H concentrations of 1 × 1019 and 2 × 1020 cm-3, respectively, annealed at 1230 °C was 18 ps at 300 K. This value is almost comparable to that of the (0001) Ga-polar p-type Mg-doped GaN (p-GaN:Mg) homoepitaxial film of the same Mg concentration. By correlating τ PL and the concentration of major vacancy-type defects quantified using positron annihilation spectroscopy, the electron capture-cross-section (σn) of the major nonradiative recombination centers (NRCs), namely, clusters of Ga vacancies (VGas) and N vacancies (VNs) such as (VGa)3(VN)3, is estimated at a few times 10-13 cm2. This σn value is also comparable to that of the major NRCs in p-GaN:Mg epilayers, namely, VGa(VN)2 or VGa(VN)3, although the clustering sizes of the defects are different. These σn values are commonly larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of the major NRCs, VGaVN divacancies, in n-type GaN.
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U2 - 10.1063/1.5050967
DO - 10.1063/1.5050967
M3 - Article
AN - SCOPUS:85056084876
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 191901
ER -