Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorqanic vapor phase epitaxy

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High purity CuInSe2 heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix.

Original languageEnglish
Pages (from-to)1840-1842
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 1997 Apr 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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