Room temperature intense terahertz emission from a dual grating gate plasmon-resonant emitter using InAlAs/InGaAs/InP material systems

Amine El Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

Original languageEnglish
Pages (from-to)1286-1289
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE93-C
Issue number8
DOIs
Publication statusPublished - 2010 Aug

Keywords

  • Dual grating gate dimension
  • Emitter
  • Plasmon resonance
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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