Room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 μm

K. Ohtani, K. Fujita, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 um is reported The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K.

Original languageEnglish
Pages (from-to)520-522
Number of pages3
JournalElectronics Letters
Volume43
Issue number9
DOIs
Publication statusPublished - 2007 May 7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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