A room-temperature InAs/AlSb quantum-cascade laser operating at 8.9 um is reported The laser structure is grown on an n-InAs (100) substrate by solid-source molecular-beam epitaxy. The active region utilises a diagonal intersubband transition in an InAs/AlSb three-quantum-well structure. Observed threshold current density in pulse mode is 2.6 kA/cm2 at 80 K and 12.0 kA/cm2 at 300 K. The maximum operation temperature is 305 K.
ASJC Scopus subject areas
- Electrical and Electronic Engineering