A doubly interdigitated grating gates structure was incorporated into a GaAs-based high-electron mobility transistor to configure a plasmon-resonant emitter. Two dimensional electrons are then periodically confined in 100 nm regions. The devices exhibit a plasma-wave signature under 1.5 μm cw laser illumination. Two devices with different geometries have been subjected to an impulsive laser at room temperature. The authors observed clear generation of terahertz radiation from both devices.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)