Room temperature ferromagnetism induced by electric field in cobalt-doped TiO2

T. Fukumura, Y. Yamada, K. Ueno, H. T. Yuan, H. Shimotani, Y. Iwasa, L. Gu, Susumu Tsukimoto, Yuichi Ikuhara, M. Kawasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electric field induced ferromagnetism at room temperature in cobalt-doped titanium dioxide was demonstrated by means of electric double layer transistor. This result represents that a carriermediated exchange coupling plays a principal role in the high temperature ferromagnetism in this compound. Accordingly, this compound is a promising material for room temperature semiconductor spintronics.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages53-57
Number of pages5
Edition4
DOIs
Publication statusPublished - 2012 Dec 1
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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    Fukumura, T., Yamada, Y., Ueno, K., Yuan, H. T., Shimotani, H., Iwasa, Y., Gu, L., Tsukimoto, S., Ikuhara, Y., & Kawasaki, M. (2012). Room temperature ferromagnetism induced by electric field in cobalt-doped TiO2. In Dielectric Materials and Metals for Nanoelectronics and Photonics 10 (4 ed., pp. 53-57). (ECS Transactions; Vol. 50, No. 4). https://doi.org/10.1149/05004.0053ecst