Room temperature ferromagnetism in Sn1-xVxO 2 films prepared by sol-gel method

Li Zhang, Shihui Ge, Yalu Zuo, Xueyun Zhou, Yuhua Xiao, Shiming Yan, Xiufeng Han, Zhenchao Wen

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16 Citations (Scopus)


The structure and magnetic properties of Sn1-xV xO2 (x=0.02-0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92 μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn 1-xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.

Original languageEnglish
Article number123909
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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