Room temperature ferromagnetism in Sn1-xVxO 2 films prepared by sol-gel method

Li Zhang; Shihui Ge; Yalu Zuo; Xueyun Zhou; Yuhua Xiao; Shiming Yan; Xiufeng Han; Zhenchao Wen

doi:10.1063/1.3041627

Room temperature ferromagnetism in Sn_1-xV_xO ₂ films prepared by sol-gel method

Li Zhang, Shihui Ge, Yalu Zuo, Xueyun Zhou, Yuhua Xiao, Shiming Yan, Xiufeng Han, Zhenchao Wen

Center for Spintronics Research Network (CSRN)

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The structure and magnetic properties of Sn_1-xV _xO₂ (x=0.02-0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92 μ_B for the Sn_0.98V_0.02O₂ film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V⁴⁺ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn_0.98V_0.02O₂ film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn _1-xV_xO₂ films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.

Original language	English
Article number	123909
Journal	Journal of Applied Physics
Volume	104
Issue number	12
DOIs	https://doi.org/10.1063/1.3041627
Publication status	Published - 2008 Dec 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3041627

Fingerprint Dive into the research topics of 'Room temperature ferromagnetism in Sn1-xVxO 2 films prepared by sol-gel method'. Together they form a unique fingerprint.

Cite this

@article{29c69955ff98439380d10575c3e10f1c,

title = "Room temperature ferromagnetism in Sn1-xVxO 2 films prepared by sol-gel method",

abstract = "The structure and magnetic properties of Sn1-xV xO2 (x=0.02-0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92 μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn 1-xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.",

author = "Li Zhang and Shihui Ge and Yalu Zuo and Xueyun Zhou and Yuhua Xiao and Shiming Yan and Xiufeng Han and Zhenchao Wen",

year = "2008",

month = dec,

day = "1",

doi = "10.1063/1.3041627",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Room temperature ferromagnetism in Sn1-xVxO 2 films prepared by sol-gel method

AU - Zhang, Li

AU - Ge, Shihui

AU - Zuo, Yalu

AU - Zhou, Xueyun

AU - Xiao, Yuhua

AU - Yan, Shiming

AU - Han, Xiufeng

AU - Wen, Zhenchao

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The structure and magnetic properties of Sn1-xV xO2 (x=0.02-0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92 μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn 1-xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.

AB - The structure and magnetic properties of Sn1-xV xO2 (x=0.02-0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92 μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn 1-xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.

UR - http://www.scopus.com/inward/record.url?scp=58149233812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149233812&partnerID=8YFLogxK

U2 - 10.1063/1.3041627

DO - 10.1063/1.3041627

M3 - Article

AN - SCOPUS:58149233812

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 123909

ER -

Room temperature ferromagnetism in Sn_1-xV_xO ₂ films prepared by sol-gel method

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Room temperature ferromagnetism in Sn<sub>1-x</sub>V<sub>x</sub>O <sub>2</sub> films prepared by sol-gel method'. Together they form a unique fingerprint.

Cite this