Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Mamoru Yoshimoto; Kazuki Shimozono; Tatsuro Maeda; Tsuyoshi Ohnishi; Masao Kumagai; Toyohiro Chikyow; Osamu Ishiyama; Makoto Shinohara; Hideomi Koinuma

doi:10.1143/JJAP.34.L688

Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Mamoru Yoshimoto, Kazuki Shimozono, Tatsuro Maeda, Tsuyoshi Ohnishi, Masao Kumagai, Toyohiro Chikyow, Osamu Ishiyama, Makoto Shinohara, Hideomi Koinuma

Research output: Contribution to journal › Article

103 Citations (Scopus)

Abstract

Room-temperature (20°C) epitaxy of high-melting point CeO₂ thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO₂ films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.

Original language	English
Pages (from-to)	L688-L690
Journal	Japanese journal of applied physics
Volume	34
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.34.L688
Publication status	Published - 1995 Jun 1
Externally published	Yes

Keywords

CeO thin film
Laser MBE
Oxide silicon sharp heterointer face
Pulsed laser deposition
Room-temperature epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Yoshimoto, M., Shimozono, K., Maeda, T., Ohnishi, T., Kumagai, M., Chikyow, T., Ishiyama, O., Shinohara, M., & Koinuma, H. (1995). Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. Japanese journal of applied physics, 34(6), L688-L690. https://doi.org/10.1143/JJAP.34.L688

Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. / Yoshimoto, Mamoru; Shimozono, Kazuki; Maeda, Tatsuro; Ohnishi, Tsuyoshi; Kumagai, Masao; Chikyow, Toyohiro; Ishiyama, Osamu; Shinohara, Makoto; Koinuma, Hideomi.

In: Japanese journal of applied physics, Vol. 34, No. 6, 01.06.1995, p. L688-L690.

Research output: Contribution to journal › Article

Yoshimoto, Mamoru ; Shimozono, Kazuki ; Maeda, Tatsuro ; Ohnishi, Tsuyoshi ; Kumagai, Masao ; Chikyow, Toyohiro ; Ishiyama, Osamu ; Shinohara, Makoto ; Koinuma, Hideomi. / Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. In: Japanese journal of applied physics. 1995 ; Vol. 34, No. 6. pp. L688-L690.

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