Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Mamoru Yoshimoto; Kazuki Shimozono; Tatsuro Maeda; Tsuyoshi Ohnishi; Masao Kumagai; Toyohiro Chikyow; Osamu Ishiyama; Makoto Shinohara; Hideomi Koinuma

doi:10.1143/JJAP.34.L688

Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Mamoru Yoshimoto, Kazuki Shimozono, Tatsuro Maeda, Tsuyoshi Ohnishi, Masao Kumagai, Toyohiro Chikyow, Osamu Ishiyama, Makoto Shinohara, Hideomi Koinuma

Research output: Contribution to journal › Article › peer-review

103 Citations (Scopus)

Abstract

Room-temperature (20°C) epitaxy of high-melting point CeO₂ thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO₂ films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.

Original language	English
Pages (from-to)	L688-L690
Journal	Japanese journal of applied physics
Volume	34
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.34.L688
Publication status	Published - 1995 Jun 1
Externally published	Yes

Keywords

CeO thin film
Laser MBE
Oxide silicon sharp heterointer face
Pulsed laser deposition
Room-temperature epitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. / Yoshimoto, Mamoru; Shimozono, Kazuki; Maeda, Tatsuro; Ohnishi, Tsuyoshi; Kumagai, Masao; Chikyow, Toyohiro; Ishiyama, Osamu; Shinohara, Makoto; Koinuma, Hideomi.

In: Japanese journal of applied physics, Vol. 34, No. 6, 01.06.1995, p. L688-L690.

Research output: Contribution to journal › Article › peer-review

Yoshimoto, Mamoru ; Shimozono, Kazuki ; Maeda, Tatsuro ; Ohnishi, Tsuyoshi ; Kumagai, Masao ; Chikyow, Toyohiro ; Ishiyama, Osamu ; Shinohara, Makoto ; Koinuma, Hideomi. / Room-temperature epitaxial growth of CeO₂ thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. In: Japanese journal of applied physics. 1995 ; Vol. 34, No. 6. pp. L688-L690.

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abstract = "Room-temperature (20°C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.",

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AU - Yoshimoto, Mamoru

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AU - Maeda, Tatsuro

AU - Ohnishi, Tsuyoshi

AU - Kumagai, Masao

AU - Chikyow, Toyohiro

AU - Ishiyama, Osamu

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