TY - JOUR
T1 - Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface
AU - Yoshimoto, Mamoru
AU - Shimozono, Kazuki
AU - Maeda, Tatsuro
AU - Ohnishi, Tsuyoshi
AU - Kumagai, Masao
AU - Chikyow, Toyohiro
AU - Ishiyama, Osamu
AU - Shinohara, Makoto
AU - Koinuma, Hideomi
PY - 1995/6/1
Y1 - 1995/6/1
N2 - Room-temperature (20°C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.
AB - Room-temperature (20°C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.
KW - CeO thin film
KW - Laser MBE
KW - Oxide silicon sharp heterointer face
KW - Pulsed laser deposition
KW - Room-temperature epitaxy
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U2 - 10.1143/JJAP.34.L688
DO - 10.1143/JJAP.34.L688
M3 - Article
AN - SCOPUS:0029327765
VL - 34
SP - L688-L690
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
ER -