Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface

Mamoru Yoshimoto, Kazuki Shimozono, Tatsuro Maeda, Tsuyoshi Ohnishi, Masao Kumagai, Toyohiro Chikyow, Osamu Ishiyama, Makoto Shinohara, Hideomi Koinuma

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

Room-temperature (20°C) epitaxy of high-melting point CeO2 thin films was achieved for the first time on Si(lll) substrates. Cross-sectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundary amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum under optimized oxygen partial pressures and by hydrogen termination of the Si surface.

Original languageEnglish
Pages (from-to)L688-L690
JournalJapanese journal of applied physics
Volume34
Issue number6
DOIs
Publication statusPublished - 1995 Jun 1
Externally publishedYes

Keywords

  • CeO thin film
  • Laser MBE
  • Oxide silicon sharp heterointer face
  • Pulsed laser deposition
  • Room-temperature epitaxy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yoshimoto, M., Shimozono, K., Maeda, T., Ohnishi, T., Kumagai, M., Chikyow, T., Ishiyama, O., Shinohara, M., & Koinuma, H. (1995). Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. Japanese journal of applied physics, 34(6), L688-L690. https://doi.org/10.1143/JJAP.34.L688