Room-temperature electrical-field induced oxygen diffusion of aluminum/yttria-stabilized zirconia thin film grown on Si substrate

Naoki Wakiya, Naoya Tajiri, Takanori Kiguchi, Nobuyasu Mizutani, Jeffrey S. Cross, Kazuo Shinozaki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A mechanism is proposed for room-temperature "electrical-field-induced oxygen diffusion" based on the interface reaction of aluminum/yttria- stabilized zirconia (YSZ) and the measurements of film leakage properties. The application of a positive electric field (1 MV·cm-1) to a 25-nm-thick and 200-μm-diameter Al top electrode on a YSZ/Si thin film changes the color of the Al top electrode from silver to black in 400 s because of Al oxidation, as confirmed by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Electrically induced diffusion of oxygen ions from the YSZ into the Al electrode causes the oxidation. This phenomenon was not observed when a negative field was applied; nor was it shown by an Al/SiO2/Si thin film when a positive field (50MV·cm _1) was applied. This method, which might be useful for device applications, can detect the redox reaction between the Al top electrode and the material, thereby indicating oxygen diffusion at low temperatures.

Original languageEnglish
Pages (from-to)8829-8831
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number11
DOIs
Publication statusPublished - 2006 Nov 15
Externally publishedYes

Keywords

  • DC current measurements
  • Film
  • Oxygen diffusion
  • Yttria-stabilized zlrconia

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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