Room-temperature edge functionalization and doping of graphene by mild plasma

Toshiaki Kato, Liying Jiao, Xinran Wang, Hailiang Wang, Xiaolin Li, Li Zhang, Rikizo Hatakeyama, Hongjie Dai

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

A direct correlation between carrier doping and selective edge functionalization is revealed for graphene treated with a mild NH3 plasma. Raman mapping analysis shows that the D-peak near the edge of the graphene sheet selectively increases after plasma treatment. Electrical measurements show that the Dirac point position of a graphene nanoribbon device shifts toward a negative gate-bias voltage.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
JournalSmall
Volume7
Issue number5
DOIs
Publication statusPublished - 2011 Mar 7

Keywords

  • doping
  • edge functionalization
  • graphene
  • nanoribbons
  • plasma

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Fingerprint Dive into the research topics of 'Room-temperature edge functionalization and doping of graphene by mild plasma'. Together they form a unique fingerprint.

  • Cite this

    Kato, T., Jiao, L., Wang, X., Wang, H., Li, X., Zhang, L., Hatakeyama, R., & Dai, H. (2011). Room-temperature edge functionalization and doping of graphene by mild plasma. Small, 7(5), 574-577. https://doi.org/10.1002/smll.201002146