Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Eiji Higurashi; Yuta Sasaki; Ryuji Kurayama; Tadatomo Suga; Yasuo Doi; Yoshihiro Sawayama; Iwao Hosako

doi:10.7567/JJAP.54.030213

Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Eiji Higurashi, Yuta Sasaki, Ryuji Kurayama, Tadatomo Suga, Yasuo Doi, Yoshihiro Sawayama, Iwao Hosako

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

Original language	English
Article number	030213
Journal	Japanese journal of applied physics
Volume	54
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.54.030213
Publication status	Published - 2015 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.",

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AU - Higurashi, Eiji

AU - Sasaki, Yuta

AU - Kurayama, Ryuji

AU - Suga, Tadatomo

AU - Doi, Yasuo

AU - Sawayama, Yoshihiro

AU - Hosako, Iwao

PY - 2015/3/1

Y1 - 2015/3/1

N2 - This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

AB - This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

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Room-temperature direct bonding of germanium wafers by surface-activated bonding method

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