Room-temperature direct bonding of germanium wafers by surface-activated bonding method

Eiji Higurashi, Yuta Sasaki, Ryuji Kurayama, Tadatomo Suga, Yasuo Doi, Yoshihiro Sawayama, Iwao Hosako

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding of Ge wafers was not sensitive to the background vacuum pressure in a wafer-bonding chamber compared with the bonding of Si wafers. The current-voltage characteristics and microstructures of bonded interfaces formed by SAB and low-temperature plasma activation bonding (PAB) were compared. It was demonstrated that junctions with very low resistivity can be obtained by SAB at room temperature.

Original languageEnglish
Article number030213
JournalJapanese journal of applied physics
Issue number3
Publication statusPublished - 2015 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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