Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

D. Coquillat; S. Nadar; F. Teppe; N. Dyakonova; S. Boubanga-Tombet; W. Knap; T. Nishimura; T. Otsuji; Y. M. Meziani; G. M. Tsymbalov; V. V. Popov

doi:10.1364/OE.18.006024

Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

D. Coquillat, S. Nadar, F. Teppe, N. Dyakonova, S. Boubanga-Tombet, W. Knap, T. Nishimura, T. Otsuji, Y. M. Meziani, G. M. Tsymbalov, V. V. Popov

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

Original language	English
Pages (from-to)	6024-6032
Number of pages	9
Journal	Optics Express
Volume	18
Issue number	6
DOIs	https://doi.org/10.1364/OE.18.006024
Publication status	Published - 2010 Mar 15

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.18.006024

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title = "Room temperature detection of sub-terahertz radiation in double-grating-gate transistors",

abstract = "Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.",

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T1 - Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

AU - Coquillat, D.

AU - Nadar, S.

AU - Teppe, F.

AU - Dyakonova, N.

AU - Boubanga-Tombet, S.

AU - Knap, W.

AU - Nishimura, T.

AU - Otsuji, T.

AU - Meziani, Y. M.

AU - Tsymbalov, G. M.

AU - Popov, V. V.

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

AB - Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.

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Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

Abstract

ASJC Scopus subject areas

UN SDGs

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