Abstract
Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.
Original language | English |
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Pages (from-to) | 6024-6032 |
Number of pages | 9 |
Journal | Optics Express |
Volume | 18 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 Mar 15 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics