Abstract
Silicon nitride films have been deposited by low frequency 50Hz plasma CVD using a nitrogen and silane mixture at room temperature. To deposit high quality silicon nitride, the silane fraction in the nitrogen and silane mixture has to be less than 5 %. The refractive index, breakdown field strength and resistivity of the obtained silicon nitride film were 2.0, 1.2x107 V/cm and 6x1015 Ωcm, respectively. Mechanism of the deposition of high quality silicon nitride is discussed on the basis of the experimentally observed light emission spectrum from the plasma and of the electron energy distribution function in the plasma theoretically calculated by the Boltzmann equation method.
| Original language | English |
|---|---|
| Pages (from-to) | 573-586 |
| Number of pages | 14 |
| Journal | Journal of Electronic Materials |
| Volume | 14 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1985 Sep 1 |
| Externally published | Yes |
Keywords
- low temperature process
- nitride and silane mixture
- plasma CVD
- silicon nitride
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Shimozuma, M., Kitamori, K., Ohno, H., Hasegawa, H., & Tagashira, H. (1985). Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD. Journal of Electronic Materials, 14(5), 573-586. https://doi.org/10.1007/BF02654026