Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD

M. Shimozuma, K. Kitamori, H. Ohno, H. Hasegawa, H. Tagashira

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Silicon nitride films have been deposited by low frequency 50Hz plasma CVD using a nitrogen and silane mixture at room temperature. To deposit high quality silicon nitride, the silane fraction in the nitrogen and silane mixture has to be less than 5 %. The refractive index, breakdown field strength and resistivity of the obtained silicon nitride film were 2.0, 1.2x107 V/cm and 6x1015 Ωcm, respectively. Mechanism of the deposition of high quality silicon nitride is discussed on the basis of the experimentally observed light emission spectrum from the plasma and of the electron energy distribution function in the plasma theoretically calculated by the Boltzmann equation method.

Original languageEnglish
Pages (from-to)573-586
Number of pages14
JournalJournal of Electronic Materials
Volume14
Issue number5
DOIs
Publication statusPublished - 1985 Sep 1
Externally publishedYes

Keywords

  • low temperature process
  • nitride and silane mixture
  • plasma CVD
  • silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD'. Together they form a unique fingerprint.

  • Cite this