Room-temperature CW operation of II-VI lasers grown on ZnSe substrates cleaned with hydrogen plasma

Tetsuichiro Ohno, Akira Ohki, Takashi Matsuoka

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Hydrogen plasma cleaning was applied for ZnSe homoepitaxial growth along with a novel wet etching technique for ZnSe substrates. The dependencies of etch-pit density (EPD) on RF power and cleaning temperature were investigated; for RF power below 250 W, the EPD is suppressed to about 1 × 105/cm2, and the optimum temperature range is between 260 and 280°C. The EPD of ZnSe film grown on ZnSe substrate cleaned at 260°C and 220 W for 20 min is 2.7 × 104/cm2. SCH II-VI laser diodes (LDs) containing ZnMgSSe cladding layers were fabricated on semi-insulating ZnSe substrates cleaned under the optimum conditions. LDs with HR coating on both facets demonstrate CW oscillation at room temperature. Typical threshold current and wavelength are 84 mA and 517 nm, respectively.

Original languageEnglish
Pages (from-to)550-553
Number of pages4
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998 Jan 1
Externally publishedYes

Keywords

  • Homoepitaxy
  • Laser diode
  • Plasma cleaning
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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