The Ids-Vg characteristics of the aluminum-oxide glassy alloy (Ni0.36Nb0.24Zr0.40)90-H 10 field-effect transistor (GAFET) for gatedrain bias voltage from -50 to +50 μV were measured at room temperature. We observed four kinds of drain current oscillations for gate voltage at two-current plateau regions of -20∼-15 and +35∼+40 μV. The transistor showed the three-dimensional Coulomb diamond structure. From DC current standards I=ef, we get f=256 GHz for the first peak, being tunneling of one electron.
- Coulomb diamond
- Coulomb oscillation
- Glassy alloy
- room-temperature field-effect transistor
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Condensed Matter Physics