Room-temperature coulomb oscillation of Ni-Nb-Zr-H glassy alloy

Mikio Fukuhara, Ryo Sato, Tetsu Suzuki, Akihisa Inoue

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The Ids-Vg characteristics of the aluminum-oxide glassy alloy (Ni0.36Nb0.24Zr0.40)90-H 10 field-effect transistor (GAFET) for gatedrain bias voltage from -50 to +50 μV were measured at room temperature. We observed four kinds of drain current oscillations for gate voltage at two-current plateau regions of -20∼-15 and +35∼+40 μV. The transistor showed the three-dimensional Coulomb diamond structure. From DC current standards I=ef, we get f=256 GHz for the first peak, being tunneling of one electron.

Original languageEnglish
Pages (from-to)2289-2293
Number of pages5
JournalModern Physics Letters B
Volume24
Issue number22
DOIs
Publication statusPublished - 2010 Aug 30

Keywords

  • Coulomb diamond
  • Coulomb oscillation
  • Glassy alloy
  • room-temperature field-effect transistor

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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