Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors

S. Boubanga-Tombet, F. Teppe, J. Torres, A. El Moutaouakil, D. Coquillat, N. Dyakonova, C. Consejo, P. Arcade, P. Nouvel, H. Marinchio, T. Laurent, C. Palermo, A. Penarier, T. Otsuji, L. Varani, W. Knap

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent terahertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase in the carriers' density and drift velocity.

Original languageEnglish
Article number262108
JournalApplied Physics Letters
Volume97
Issue number26
DOIs
Publication statusPublished - 2010 Dec 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors'. Together they form a unique fingerprint.

Cite this