Room temperature bonding of wafers with thin nanocrystalline metal films

T. Shimatsu, M. Uomoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

Room temperature bonding between two flat wafers using thin metal films was studied. Thin nanocrystalline metal films (0.2-20 nm thick) were fabricated on two flat wafers' surfaces using sputter deposition. Bonding of the two metal films on the wafers was accomplished immediately after film deposition in vacuum. The wafers were bonded at room temperature over the entire bonded area using metal films of 16 kinds including W films. The two films' bonded structure was related closely to the self-diffusion coefficients of the metal films. The very high atomic diffusion coefficient at the grain boundaries and film surfaces is likely to have enabled bonding at room temperature. The wafers were bonded even with films of 0.2 nm thickness on each side. The potential of the bonding for applications to device fabrication is examined. Moreover, bonding in air using noble metal films is examined according to experimental results.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
Pages61-72
Number of pages12
Edition4
DOIs
Publication statusPublished - 2010 Dec 1
EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number4
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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