Room temperature bonding of wafers using Si and Ge films with extremely low electrical conductivity

M. Uomoto, A. Muraoka, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a-Ge-a-Ge films. Analyses of film structure and the surface free energy at the bonded interface revealed higher bonding potential at the connected a-Ge-a-Ge interface than that of a-Si films. The electrical resistivity of a-Ge films is 0.62 flm, which is lower than that of a-Si film (4.7 Ωm), but 7-8 order higher than that of representative material films used for bonding in vacuum. Our results indicate that room temperature bonding using a-Ge films is useful to bond wafers without any marked influence on the electrical properties of devices on wafer surfaces caused by the electrical conductivity of films used for bonding.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. Goorsky, K.D. Hobart, F. Fournel, R. Knechtel, C.S. Tan, H. Baumgart, T. Suga
PublisherElectrochemical Society Inc.
Pages199-204
Number of pages6
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
EventSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number5
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology, and Applications 15 - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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