Room temperature bonding of InGaAs wafers using thin Ge films

M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Publication series

NameProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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