TY - JOUR
T1 - Room-temperature and high-quality HfO2/SiO2gate stacked film grown by neutral beam enhanced atomic layer deposition
AU - Ge, Beibei
AU - Ohori, Daisuke
AU - Chen, Yi Ho
AU - Ozaki, Takuya
AU - Endo, Kazuhiko
AU - Li, Yiming
AU - Tarng, Jenn Hwan
AU - Samukawa, Seiji
N1 - Funding Information:
This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan under Grant Nos. MOST 110-2221-E-A49-139, MOST 109-2221-E-009-033, and MOST 109-2634-F-009-030 and in part by the “Center for mm Wave Smart Radar System and Technologies” under the Featured Area Research Center Program within the framework for the Higher Education Sprout Project by the Ministry of Education in Taiwan.
Publisher Copyright:
© 2022 Author(s).
PY - 2022/3/1
Y1 - 2022/3/1
N2 - This study reports the fabrication of the high-quality hafnium dioxide (HfO2) film at room temperature (20-30 °C) using the neutral beam enhanced atomic layer deposition (NBEALD) we developed. The HfO2 film was fabricated using tetrakis(ethylmethylamino)hafnium (TEMAH) as the Hf precursor and O2 NB as the oxidant. Argon gas was used for the carrier and purge gases. The HfO2 film-deposition process consists of 5-s TEMAH feed, 5-s Ar purge, 5-s O2 gas injection, 20-s O2 neutral beam irradiation, and 5-s Ar purge. The HfO2 film exhibited a saturated growth per cycle of 0.18 nm/cycle and a high-quality film with low C contamination (2.7%), N contamination (3.9%), and a good O/Hf ratio (2.0) was achieved. The film also had an ideal refractive index of 1.9. Additionally, continuously grown high-quality HfO2 and silicon dioxide (SiO2) gate oxide films (stacked HfO2/SiO2 gate oxide film) were successfully fabricated at room temperature. This film has the potential to decrease the thermal budget, thus enabling high flexibility when designing semiconductor structures. These findings demonstrate the effectiveness of our NBEALD in forming high-k gate stack structures.
AB - This study reports the fabrication of the high-quality hafnium dioxide (HfO2) film at room temperature (20-30 °C) using the neutral beam enhanced atomic layer deposition (NBEALD) we developed. The HfO2 film was fabricated using tetrakis(ethylmethylamino)hafnium (TEMAH) as the Hf precursor and O2 NB as the oxidant. Argon gas was used for the carrier and purge gases. The HfO2 film-deposition process consists of 5-s TEMAH feed, 5-s Ar purge, 5-s O2 gas injection, 20-s O2 neutral beam irradiation, and 5-s Ar purge. The HfO2 film exhibited a saturated growth per cycle of 0.18 nm/cycle and a high-quality film with low C contamination (2.7%), N contamination (3.9%), and a good O/Hf ratio (2.0) was achieved. The film also had an ideal refractive index of 1.9. Additionally, continuously grown high-quality HfO2 and silicon dioxide (SiO2) gate oxide films (stacked HfO2/SiO2 gate oxide film) were successfully fabricated at room temperature. This film has the potential to decrease the thermal budget, thus enabling high flexibility when designing semiconductor structures. These findings demonstrate the effectiveness of our NBEALD in forming high-k gate stack structures.
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U2 - 10.1116/6.0001607
DO - 10.1116/6.0001607
M3 - Article
AN - SCOPUS:85124420184
SN - 0734-2101
VL - 40
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
IS - 2
M1 - 022405
ER -