TY - GEN
T1 - Room Temperature Amplification of Terahertz Radiation by Grating-Gate Monolayer Graphene-Channel Transistor Structures
AU - Otsuji, Taiichi
N1 - Funding Information:
ACKNOWLEDGEMENT This work was conducted by Japan, French, Polish, and Russian collaborative research team. The author is honored to present this work here on behalf of the primary collaborators of S. Boubanga-Tombet, W. Knap, D. Yadav, A. Satou, D.B. But, V.V. Popov, I.V. Gorbenko, and V. Kachorovskii. The author also thanks V. Ryzhii, S. Mikhailov, D. Svintsov, K. Maussang, M. S. Shur, and M. Dyakonov for many useful discussions. This work was supported by JSPS KAKENHI (#16K14243 and #16H06361), Japan.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/11/8
Y1 - 2020/11/8
N2 - Using monolayer graphene grating gate structures, we demonstrate tunable resonant plasmon absorption which, with an increase of the current, turns to THz radiation amplification. The observed gain of up to 9% is far beyond the well-known landmark level of 2.3% that is maximal available in monolayer graphene when photons directly interact with electrons.
AB - Using monolayer graphene grating gate structures, we demonstrate tunable resonant plasmon absorption which, with an increase of the current, turns to THz radiation amplification. The observed gain of up to 9% is far beyond the well-known landmark level of 2.3% that is maximal available in monolayer graphene when photons directly interact with electrons.
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U2 - 10.1109/IRMMW-THz46771.2020.9370394
DO - 10.1109/IRMMW-THz46771.2020.9370394
M3 - Conference contribution
AN - SCOPUS:85103157867
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
SP - 198
EP - 199
BT - 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
PB - IEEE Computer Society
T2 - 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
Y2 - 8 November 2020 through 13 November 2020
ER -