Room-temperature adsorption of Si atoms on H-terminated Si(001)-2 x 1 surface

Hiroshi Kajiyama, Y. Suwa, S. Heike, M. Fujimori, J. Nara, T. Ohno, S. Matsuura, Taro Hitosugi, T. Hashizume

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Room-temperature adsorption of Si atoms on a hydrogen-terminated Si(001)-2 x 1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that a Si atom adsorbs at the metastable bridge site of a Si dimer forming a SiH2 cluster at room temperature. Although Si adatom has a kinetic energy sufficient to overcome the activation energy at the moment of adsorption, the reaction path to the most stable off-centered inter-bridge site is narrow and the energy dissipation takes place before the transition. The ground-state adsorption is achieved by an annealing of the sample at 520 K.

    Original languageEnglish
    Pages (from-to)389-392
    Number of pages4
    Journaljournal of the physical society of japan
    Volume74
    Issue number1
    DOIs
    Publication statusPublished - 2005 Jan 1

    Keywords

    • Adsorption
    • DFT
    • Dissipation
    • STM
    • Silicon
    • Surface

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Kajiyama, H., Suwa, Y., Heike, S., Fujimori, M., Nara, J., Ohno, T., Matsuura, S., Hitosugi, T., & Hashizume, T. (2005). Room-temperature adsorption of Si atoms on H-terminated Si(001)-2 x 1 surface. journal of the physical society of japan, 74(1), 389-392. https://doi.org/10.1143/JPSJ.74.389