The demand for single photon sources at λ = 1.54 µm, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:Ox centers in Si still a viable resource thanks to the optical transition of Er3+: 4I13/2 → 4I15/2. Yet, to date, the implementation of such system remains hindered by its extremely low emission rate. In this Letter, we explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of Er:Ox in Si. The emitted photons, excited by a λ = 792 nm laser in both large areas and confined dots of diameter down to 5 µm, are collected by an inverted confocal microscope. The lower-bound number of detectable emission centers within our diffraction-limited illumination spot is estimated to be down to about 104, corresponding to an emission rate per individual ion of about 4 ×103 photons/s.
|Publication status||Published - 2017 Feb 1|
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