Room-temperature 1.54 µm photoluminescence of Er:Ox centers at extremely low concentration in silicon

Michele Celebrano, Lavinia Ghirardini, Paolo Biagioni, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii, Enrico Prati

Research output: Contribution to journalArticlepeer-review


The demand for single photon sources at λ = 1.54 µm, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:Ox centers in Si still a viable resource thanks to the optical transition of Er3+: 4I13/24I15/2. Yet, to date, the implementation of such system remains hindered by its extremely low emission rate. In this Letter, we explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of Er:Ox in Si. The emitted photons, excited by a λ = 792 nm laser in both large areas and confined dots of diameter down to 5 µm, are collected by an inverted confocal microscope. The lower-bound number of detectable emission centers within our diffraction-limited illumination spot is estimated to be down to about 104, corresponding to an emission rate per individual ion of about 4 ×103 photons/s.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2017 Feb 1

ASJC Scopus subject areas

  • General

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