TY - JOUR
T1 - Roles of strain and carrier in silicon oxidation
AU - Ogawa, Shuichi
AU - Yoshigoe, Akitaka
AU - Tang, Jaiyi
AU - Sekihata, Yuki
AU - Takakuwa, Yuji
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI (Grant Nos. JP12650026, JP16360015, JP25870064, JP16H05969, JP17KK0125, JP19K05260,). The XPS measurements using synchrotron radiation were performed at beamline BL23SU of SPring-8 (Proposal Nos. 2006A1744, 2006B1628, 2007B3805, 2008A3878, 2008B3874, 2009A3872, 2015A3874, 2015B3784, 2018B3801, 2018B3836, 2019A3801, 2019A3836, 2019B3801).
Publisher Copyright:
© 2020 The Japan Society of Applied Physics.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - In this paper we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O2 dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO2/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO2, thermal excitation of Si emission rate, and heat of adsorption. The band bending of the SiO2/Si interface is caused by the electron and hole trapping at the vacancy for n-and p-Si substrates, respectively, leading to the charged states with unpaired electrons that is responsible for the dissociative adsorption of O2 molecule. Since P b0 and P b1 centers with unpaired electron are not concerned with the charge transfer of band bending, they are also the active sites for O2 dissociative adsorption.
AB - In this paper we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O2 dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO2/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO2, thermal excitation of Si emission rate, and heat of adsorption. The band bending of the SiO2/Si interface is caused by the electron and hole trapping at the vacancy for n-and p-Si substrates, respectively, leading to the charged states with unpaired electrons that is responsible for the dissociative adsorption of O2 molecule. Since P b0 and P b1 centers with unpaired electron are not concerned with the charge transfer of band bending, they are also the active sites for O2 dissociative adsorption.
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U2 - 10.35848/1347-4065/ab82a9
DO - 10.35848/1347-4065/ab82a9
M3 - Article
AN - SCOPUS:85085109472
VL - 59
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SM
M1 - SM0801
ER -