Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

Kazunobu Kojima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Hajime Fujikura, Shigefusa F. Chichibu

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10 Citations (Scopus)

Abstract

The relationship between the concentration of carbon (C) impurity, [C], and quantum efficiency (QE) of radiation in n-type GaN crystals was clarified under photo-excitation conditions at room temperature. Since C acts as a trap for minority holes as well as a compensator for majority electrons, the external QE (EQE) and internal QE (IQE) values for the near-band-edge (NBE) emission showed a monotonic increase with decreasing [C], where NBE EQE (IQE) values are 0.02% (0.70%) and 0.53% (14.2%) for [C] = 2.0 × 1016 cm-3 and [C] = 4.0 × 1014 cm-3, respectively, under a cw photo-pumping density of 140 W cm-2.

Original languageEnglish
Article number012004
JournalApplied Physics Express
Volume13
Issue number1
DOIs
Publication statusPublished - 2020 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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