Role of the first atomic layers in epitaxial relationship and interface characteristics of SrTiO3 films on CeO2/YSZ/Si(001)

Tomoaki Yamada, Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The role of the first atomic layers in epitaxial relationship and interface characteristics of SrTiO3 films on CeO 2/yttria-stabilized zirconia (YSZ)/Si(001) substrates was investigated. Although SrTiO3 film deposited on CeO 2/YSZ/Si directly was preferentially (110)-oriented, epitaxial SrTiO3(001) films could be grown on CeO2/YSZ/Si by controlling first atomic layer of the films. In the case of SrTiO3 film starting from TiO2 layer, the neither ion drift nor charge injection occurred in the SrTiO3/CeO2 interface. On the other hand, for the film starting from SrO layer, an injection-type hysteresis was observed. This is probably due to the electron traps in the interface.

Original languageEnglish
Pages (from-to)9-14
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume747
Publication statusPublished - 2003 Aug 25
Externally publishedYes
EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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