Role of Pr segregation in acceptor-state formation at ZnO grain boundaries

Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, Yuichi Ikuhara

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    79 Citations (Scopus)

    Abstract

    The role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to the specific atomic site along the boundaries, it was found not to be the direct cause of nonlinear current-voltage properties. Instead, under appropriate annealing conditions, Pr enhances formations of acceptor-type native defects that are essential for the creation of double Schottky barriers in ZnO.

    Original languageEnglish
    Article number106802
    JournalPhysical Review Letters
    Volume97
    Issue number10
    DOIs
    Publication statusPublished - 2006 Sep 11

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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