Role of oxygen transfer for high-k/SiO2/Si stack structure on flatband voltage shift

Toshihide Nabatame; Akihiko Ohi; Toyohiro Chikyow

doi:10.1149/1.3572296

Role of oxygen transfer for high-k/SiO₂/Si stack structure on flatband voltage shift

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO₂/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiO_x, Mg ²⁺-HfSiO_x, and La³⁺-HfSiO_x dielectrics as a function of the oxidation annealing temperature, while the HfO₂, N³⁺-HfSiO_x, Mg²⁺-HfO ₂, and La³⁺-HfO₂ dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg²⁺-HfO₂, La ³⁺-HfO₂ and N³⁺-HfSiO_x > HfO ₂ >> La³⁺-HfSiO_x > HfSiO_x and Mg₂₊-HfSiO_x. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO₂/Si stack structure.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages	403-416
Number of pages	14
Edition	4
DOIs	https://doi.org/10.1149/1.3572296
Publication status	Published - 2011 Aug 2
Event	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6

Publication series

Name	ECS Transactions
Number	4
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
Country	Canada
City	Montreal, QC
Period	11/5/1 → 11/5/6

ASJC Scopus subject areas

Engineering(all)

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Nabatame, T, Ohi, A & Chikyow, T 2011, Role of oxygen transfer for high-k/SiO₂/Si stack structure on flatband voltage shift. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, pp. 403-416, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting, Montreal, QC, Canada, 11/5/1. https://doi.org/10.1149/1.3572296

@inproceedings{3769bdd6d66c4bf6994754f94749385b,

title = "Role of oxygen transfer for high-k/SiO2/Si stack structure on flatband voltage shift",

abstract = "We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO2/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiOx, Mg 2+-HfSiOx, and La3+-HfSiOx dielectrics as a function of the oxidation annealing temperature, while the HfO2, N3+-HfSiOx, Mg2+-HfO 2, and La3+-HfO2 dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg2+-HfO2, La 3+-HfO2 and N3+-HfSiOx > HfO 2 >> La3+-HfSiOx > HfSiOx and Mg2+-HfSiOx. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO2/Si stack structure.",

author = "Toshihide Nabatame and Akihiko Ohi and Toyohiro Chikyow",

year = "2011",

month = aug,

day = "2",

doi = "10.1149/1.3572296",

language = "English",

isbn = "9781566778657",

series = "ECS Transactions",

number = "4",

pages = "403--416",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11",

edition = "4",

note = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - Role of oxygen transfer for high-k/SiO2/Si stack structure on flatband voltage shift

AU - Nabatame, Toshihide

AU - Ohi, Akihiko

AU - Chikyow, Toyohiro

PY - 2011/8/2

Y1 - 2011/8/2

N2 - We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO2/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiOx, Mg 2+-HfSiOx, and La3+-HfSiOx dielectrics as a function of the oxidation annealing temperature, while the HfO2, N3+-HfSiOx, Mg2+-HfO 2, and La3+-HfO2 dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg2+-HfO2, La 3+-HfO2 and N3+-HfSiOx > HfO 2 >> La3+-HfSiOx > HfSiOx and Mg2+-HfSiOx. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO2/Si stack structure.

AB - We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO2/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiOx, Mg 2+-HfSiOx, and La3+-HfSiOx dielectrics as a function of the oxidation annealing temperature, while the HfO2, N3+-HfSiOx, Mg2+-HfO 2, and La3+-HfO2 dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg2+-HfO2, La 3+-HfO2 and N3+-HfSiOx > HfO 2 >> La3+-HfSiOx > HfSiOx and Mg2+-HfSiOx. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO2/Si stack structure.

UR - http://www.scopus.com/inward/record.url?scp=79960868433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960868433&partnerID=8YFLogxK

U2 - 10.1149/1.3572296

DO - 10.1149/1.3572296

M3 - Conference contribution

AN - SCOPUS:79960868433

SN - 9781566778657

T3 - ECS Transactions

SP - 403

EP - 416

BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11

T2 - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting

Y2 - 1 May 2011 through 6 May 2011

ER -