TY - GEN
T1 - Role of oxygen transfer for high-k/SiO2/Si stack structure on flatband voltage shift
AU - Nabatame, Toshihide
AU - Ohi, Akihiko
AU - Chikyow, Toyohiro
PY - 2011
Y1 - 2011
N2 - We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO2/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiOx, Mg 2+-HfSiOx, and La3+-HfSiOx dielectrics as a function of the oxidation annealing temperature, while the HfO2, N3+-HfSiOx, Mg2+-HfO 2, and La3+-HfO2 dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg2+-HfO2, La 3+-HfO2 and N3+-HfSiOx > HfO 2 >> La3+-HfSiOx > HfSiOx and Mg2+-HfSiOx. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO2/Si stack structure.
AB - We investigate the difference of flatband voltage (Vfb) behavior in high-k/SiO2/Si stack structure due to oxygen vacancy (Vo) and additional oxygen generated by the reduction and oxidation annelaing processes, respectively. The Vfb of Mg and La-incorporated Hf-based high-k dielectrics is also influenced by Vo generation in high-k layer. We found that the non-linear relationships of Vfb behavior appears in HfSiOx, Mg 2+-HfSiOx, and La3+-HfSiOx dielectrics as a function of the oxidation annealing temperature, while the HfO2, N3+-HfSiOx, Mg2+-HfO 2, and La3+-HfO2 dielectrics show the linear relationships of Vfb shift by introducing additional oxygen. Furthermore, it is clear that the Vfb shift of all high-k materials satisfies the diffusion equation; which indicates that the oxygen transfer in high-k layer is a dominant factor in determining Vfb. We found that the oxygen diffusion in high-k materials can be ordered as follows: Mg2+-HfO2, La 3+-HfO2 and N3+-HfSiOx > HfO 2 >> La3+-HfSiOx > HfSiOx and Mg2+-HfSiOx. Note that the oxygen transfer in high-k materials is very important to recognize mechanism of Vfb shift for high-k/SiO2/Si stack structure.
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U2 - 10.1149/1.3572296
DO - 10.1149/1.3572296
M3 - Conference contribution
AN - SCOPUS:79960868433
SN - 9781566778657
T3 - ECS Transactions
SP - 403
EP - 416
BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
PB - Electrochemical Society Inc.
ER -